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DRAM core design engineer - Germany

MICRON SEMICONDUCTOR ITALIA SRL



To support our growing DRAM business in Munich we are looking for a DRAM core design engineer for the following tasks:
• Develop and improve DRAM memory core circuits (row- and column-decoder and -driver, sense-amplifier, …) for best area and reliability
• Optimize DRAM sense-amplifier for area and resolution including mismatch compensating enhancements
• Enable DRAM column operation at the sub-ns speed required by current graphics DRAMs
• Participate in the development of error-correcting circuitry to protect the memory
• Participate in the development of new redundancy architectures
• Participate in planning the power-network of multi-power rail DRAM core
• Participate in developing the DfT for advanced DRAM cores
• Assist in post-silicon design validation


About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.

To learn more, please visit micron.com/careers


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